According to researchers at the Fraunhofer Institute for Solid State Physics (IAF) and the Ferdinand-Braun-Institut in Berlin, it has been found that GaN transistors reduce the voltage converter losses by more than half.
GaN transistors, compared to conventional silicon-based designs, create low on-resistance and high switching speeds, resulting in efficiency levels of 98%. In practical tests, they show performance of up to 1 kW, close to the cutting-edge design.
Dr. Walter Daves, who supervised the Robert Bosch project, stated: "The stress tests conducted to date also imply high short-circuit strength and thermal stability. During on-resistance operation, the maximum current of these devices is as high as 100 A."
It is said that the transistors used in battery chargers for electric vehicles have been tested, and the transistors in KACO New Energy's photovoltaic inverters have also been tested.
IXYS Semiconductor GmbH, United Monolithic Semiconductors GmbH, Universität Erlangen-Nürnberg, and RWTH Aachen also collaborated with the Fraunhofer Institute for Applied Solid State Physics on this research project.
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